ECE 442 Power Semiconductor Devices and Integrated Circuits

Description:  Credit 4U/5G. ECE 442 is a relevant course and is a supplement for the courses ECE 445 and ECE 545 and  deals with the physics of devices encountered in the power-electronic and switching converter systems.

Prerequisite:  ECE 342 and ECE 346


1. B.J. Baliga, Power Semiconductor Devices, PWS Publishing Co., latest edition. (TEXTBOOK)
2. V. Benda, J. Gowar, and D.A. Grant, Power Semiconductor Devices: Theory and Applications, John Wiley and Sons, 1999.
3. S.M. Sze, Modern Semiconductor Device Physics, John Wiley and Sons.
4. Erickson, R.W. and Maksimovic, D., 2001, Fundamentals of Power Electronics, Kluwer Academic Publishers.
5. B.J. Baglia, Modern Power Devices, Krieger, 1992.


1. Basic power converters

a. Hard- vs. soft-switching converters
b. Circuit vs. device parametric tradeoff

2. Semiconductor fundamentals and transport physics

a. Band structure and charge carriers in semiconductor
b. Drift and diffusion - mobility, diffusion constant and continuity
c. Resistivity
d. Excess carriers in semiconductor and lifetime
e. Special topics important to power devices - high level injection
and surface scattering effects

3. Breakdown mechanisms

a. Basic p-n junction physics
b. Breakdown physics
c. Edge termination techniques

4. Power rectifier

a. Schottky barrier and P-i-N rectifiers:comparative discussion
b. Forward conduction and reverse recovery mechanism
c. Modern device structures:JBS and MPS rectifiers
d. Circuit modeling

5. Power BJT and thyristor

a. Basic device operation and physics
b. Static-blocking characteristics
c. Dynamic switching characteristics
d. Second breakdown phenomenon
e. Introduction to thyristor structure and concept - blocking and
switching chracteristics

6. Power MOSFET

a. Basic MOS structure and physics - threshold voltage, channel
and on resistance, parasitic BJT
b. Static blocking characteristics
c. Dynamic-switching characteristics and frequency response -
inter-electrode capacitances
 d. Short overview of modern device structures
 e. Circuit modeling

7. Insulated gate bipolar transistor (IGBT)

a. Basic device structure and operating mechanism
b. Static blocking characteristics
c. Dynamic switching characteristics
d. Parasitic thyristor latch-up and safe operating area
e. Circuit modeling

8. Emerging high-power devices

a. Photoconductive switches
b. MOS-controlled thyristors
c. Emitter-switched thyristors